| PART |
Description |
Maker |
| CR2AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR08AS-8 |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
POWEREX[Powerex Power Semiconductors]
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CR2AM |
LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CR3PM |
LOW POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BCR3AM |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BCR3 |
LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Semicon...
|
| BCR16A BCR16B BCR16C BCR16E |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| CR03AM |
LOW POWER USE NON-INSULATED TYPE/ GLASS PASSIVATION TYPE
LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Semiconductor
|
| BCR6 BCR6AM |
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| QM75E3Y-H QM75E2Y-H |
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BCR10CM |
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 中功率使用非绝缘型，平面型钝
|
Mitsubishi Electric, Corp.
|
